IEEE Seminar for ECE
Spin-Transfer Torque RAM (STT-RAM) is an emerging non-volatile memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM and the non-volatility of Flash with essentially unlimited endurance. It makes use of the modern spintronics technology that exploits the quantum propensity of the electrons to spin as well as making use of their charge state. Magneto resistive RAM (MRAM) is a non-volatile memory technology in which a bit is stored as the magnetic orientation of the free layer of a magnetic tunnel junction (MTJ). STT-RAM is a form of MRAM that uses spin transfer torque to reorient the free layer by passing a large, directional write current through the MTJ. The emerging Spin Torque Transfer memory (STTRAM) is a promising candidate for future on-chip caches due to STT-RAM’s high density, low leakage, long endurance and high access speed. There is no limit for write-read cycles and radiation-resistant. It has greater performance, reliability and scalability. However, one of the major challenges of STT-RAM is its high write current, which is disadvantageous when used as an on-chip cache. The scientists accept that STT-RAM is the future memory technology and will revolutionize in the memory sector of embedded system. This report covers the recent developments and achievements in the field of STT-RAM. Familiarisation of STTRAM is the objective of this seminar.