Digital Memory is and has been a close comrade of each and every technical advancement in Information Technology. The current memory technologies have a lot of limitations.These memory technologies when needed to expand will allow expansion only two dimensional space. Hence area required will be increased. Next Generation Memories satisfy all of the good attributes of memory. The most important thing among them is their ability to support expansion in three dimensional space. They include MRAM, FeRAM, Polymer Memory, Ovonics Unified Memory. Polymer Memory is the leading technology among them. It is mainly because of their expansion capability in three dimensional space. A polymer retains space charges near a metal surface when there is a bias or electrical current running across the surface. We can store space charges in a polymer layer, and conveniently check the presence of space charge to know the state of the polymer layer. Space charges are essentially differences in electrical charge in a given region. They can be read using an electrical pulse because they change the way the devices conduct electricity. In this paper fabrication of various organic and polymer devices, electrical behavior for the voltage applied, endurance, retention time and programming/erasing speed of each device are presented. This paper aims at comparing the characteristics and behaviour of those organic/polymer devices and explains which device is more likely to be used.